図3：TELが開発した新手法 出所：Yoshihide Kihara et al. (TEL) “Beyond 10 μm Depth Ultra-High Speed Etch Process with 84% Lower Carbon Footprint for Memory Channel Hole of 3D NAND Flash over 400 Layers”, 2023 Symposium on VLSI Technology and Circuits Digest of Technical Papers, T3-2
