裏面電源供給がブレークする予感、そしてDRAMも3次元化に加速 〜VLSI2023

図12［クリックで拡大］ 出所：Changhwan Lee et al. (Samsung) “Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory”, 2023 Symposium on VLSI Technology and Circuits Digest of Technical Papers, T3-1

図12［クリックで拡大］ 出所：Changhwan Lee et al. (Samsung) “Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory”, 2023 Symposium on VLSI Technology and Circuits Digest of Technical Papers, T3-1