裏面電源供給がブレークする予感、そしてDRAMも3次元化に加速 〜VLSI2023
図12[クリックで拡大] 出所:Changhwan Lee et al. (Samsung) “Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory”, 2023 Symposium on VLSI Technology and Circuits Digest of Technical Papers, T3-1
![図12[クリックで拡大] 出所:Changhwan Lee et al. (Samsung) “Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory”, 2023 Symposium on VLSI Technology and Circuits Digest of Technical Papers, T3-1](/ee/articles/2307/26/l_mm230726_nano13.jpg)