裏面電源供給がブレークする予感、そしてDRAMも3次元化に加速 〜VLSI2023

図10[クリックで拡大] 出所:Kanguk Kim et al. (Samsung) “14nm DRAM Development and Manufacturing”, 2023 Symposium on VLSI Technology and Circuits Digest of Technical Papers, T18-1.

図10[クリックで拡大] 出所:Kanguk Kim et al. (Samsung) “14nm DRAM Development and Manufacturing”, 2023 Symposium on VLSI Technology and Circuits Digest of Technical Papers, T18-1.